Novel package technology of ultra high power light-emitting diodes by electroplating

Y. K. Su; K. C. Chen; C. L. Lin; Ricky W. Chuang; J. Q. Huang; Chiu Hsu Hsiao

doi:10.1109/CSICS07.2007.9

Novel package technology of ultra high power light-emitting diodes by electroplating

Y. K. Su, K. C. Chen, C. L. Lin, Ricky W. Chuang, J. Q. Huang, Chiu Hsu Hsiao

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.

Original language	English
Title of host publication	29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium
Subtitle of host publication	"Tastes of the Northwest" - Technical Digest 2007
Pages	24-27
Number of pages	4
DOIs	https://doi.org/10.1109/CSICS07.2007.9
Publication status	Published - 2007
Event	29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Portland, OR, United States Duration: 2007 Oct 14 → 2007 Oct 17

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Other

Other	29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest"
Country/Territory	United States
City	Portland, OR
Period	07-10-14 → 07-10-17

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/CSICS07.2007.9

Cite this

Su, Y. K., Chen, K. C., Lin, C. L., Chuang, R. W., Huang, J. Q., & Hsiao, C. H. (2007). Novel package technology of ultra high power light-emitting diodes by electroplating. In 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007 (pp. 24-27). Article 4384389 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS07.2007.9

Su, Y. K. ; Chen, K. C. ; Lin, C. L. et al. / Novel package technology of ultra high power light-emitting diodes by electroplating. 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. pp. 24-27 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

@inproceedings{1cccbb4d2efe4787a46b6e84d5a8b90c,

title = "Novel package technology of ultra high power light-emitting diodes by electroplating",

abstract = "Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.",

author = "Su, {Y. K.} and Chen, {K. C.} and Lin, {C. L.} and Chuang, {Ricky W.} and Huang, {J. Q.} and Hsiao, {Chiu Hsu}",

year = "2007",

doi = "10.1109/CSICS07.2007.9",

language = "English",

isbn = "1424410223",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

pages = "24--27",

booktitle = "29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium",

note = "29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: {"}Tastes of the Northwest{"} ; Conference date: 14-10-2007 Through 17-10-2007",

}

Su, YK, Chen, KC, Lin, CL, Chuang, RW, Huang, JQ & Hsiao, CH 2007, Novel package technology of ultra high power light-emitting diodes by electroplating. in 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007., 4384389, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 24-27, 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest", Portland, OR, United States, 07-10-14. https://doi.org/10.1109/CSICS07.2007.9

Novel package technology of ultra high power light-emitting diodes by electroplating. / Su, Y. K.; Chen, K. C.; Lin, C. L. et al.
29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. p. 24-27 4384389 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Novel package technology of ultra high power light-emitting diodes by electroplating

AU - Su, Y. K.

AU - Chen, K. C.

AU - Lin, C. L.

AU - Chuang, Ricky W.

AU - Huang, J. Q.

AU - Hsiao, Chiu Hsu

PY - 2007

Y1 - 2007

N2 - Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.

AB - Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.

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T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

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BT - 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium

T2 - 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest"

Y2 - 14 October 2007 through 17 October 2007

ER -

Su YK, Chen KC, Lin CL, Chuang RW, Huang JQ, Hsiao CH. Novel package technology of ultra high power light-emitting diodes by electroplating. In 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. p. 24-27. 4384389. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). doi: 10.1109/CSICS07.2007.9

Novel package technology of ultra high power light-emitting diodes by electroplating

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