TY - JOUR
T1 - Novel polymorphic phase of BaCu2As2
T2 - Impact of flux for new phase formation in crystal growth
AU - Wu, Hanlin
AU - Li, Sheng
AU - Wu, Zheng
AU - Wang, Xiqu
AU - Ofenstein, Gareth A.
AU - Kwon, Sunah
AU - Kim, Moon J.
AU - Chu, Paul C.W.
AU - Lv, Bing
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/9/2
Y1 - 2020/9/2
N2 - In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z = 2), a new polymorphic phase of BaCu2As2 (β-phase) with a much larger c lattice parameter (Z = 10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth. We have characterized this structure through single-crystal X-ray diffraction, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) studies. Furthermore, we compare this new polymorphic intergrowth structure with the α-phase BaCu2As2 (ThCr2Si2 type with Z = 2) and the β-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types with Z = 6), both with the same space group I4/mmm. Electrical transport studies reveal p-type carriers and magnetoresistivity up to 22% at 5 K and under a magnetic field of 7 T. Our work suggests a new route for the discovery of new polymorphic structures through flux and temperature control during material synthesis.
AB - In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z = 2), a new polymorphic phase of BaCu2As2 (β-phase) with a much larger c lattice parameter (Z = 10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth. We have characterized this structure through single-crystal X-ray diffraction, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) studies. Furthermore, we compare this new polymorphic intergrowth structure with the α-phase BaCu2As2 (ThCr2Si2 type with Z = 2) and the β-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types with Z = 6), both with the same space group I4/mmm. Electrical transport studies reveal p-type carriers and magnetoresistivity up to 22% at 5 K and under a magnetic field of 7 T. Our work suggests a new route for the discovery of new polymorphic structures through flux and temperature control during material synthesis.
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U2 - 10.1021/acs.cgd.0c00614
DO - 10.1021/acs.cgd.0c00614
M3 - Article
AN - SCOPUS:85092216422
SN - 1528-7483
VL - 20
SP - 5922
EP - 5930
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 9
ER -