Novel Reliability Mechanism of Quasi Reaction-Diffusion Model for PBTI in n-channel HfO2 LTPS-TFTs with Dual Plasma Treatment

Chien Hung Wu, Bo Wen Huang, Kow Ming Chang, Ting Chia Chang, Lin Sheng-Chia , Jian Hong Lin, Shui-Jinn Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationThe 11th International Thin Film Transistor Conference
Place of PublicationRennes, France
Publication statusPublished - 2015 Feb 27

Cite this

Wu, C. H., Huang, B. W., Chang, K. M., Chang, T. C., Sheng-Chia , L., Lin, J. H., & Wang, S-J. (2015). Novel Reliability Mechanism of Quasi Reaction-Diffusion Model for PBTI in n-channel HfO2 LTPS-TFTs with Dual Plasma Treatment. In The 11th International Thin Film Transistor Conference