Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

K. W. Chen; Y. L. Wang; C. P. Liu; L. Chang; F. Y. Li

doi:10.1016/j.tsf.2005.07.061

Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

K. W. Chen, Y. L. Wang, C. P. Liu, L. Chang, F. Y. Li

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-μm square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved.

Original language	English
Pages (from-to)	50-55
Number of pages	6
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.061
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.061

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title = "Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology",

abstract = "The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-μm square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved.",

author = "Chen, {K. W.} and Wang, {Y. L.} and Liu, {C. P.} and L. Chang and Li, {F. Y.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of National Science Council (NSC) of Taiwan for this research project under Contract No. NSC92-2216-E-006-030.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

year = "2006",

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doi = "10.1016/j.tsf.2005.07.061",

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T1 - Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

AU - Chen, K. W.

AU - Wang, Y. L.

AU - Liu, C. P.

AU - Chang, L.

AU - Li, F. Y.

N1 - Funding Information: The authors gratefully acknowledge the financial support of National Science Council (NSC) of Taiwan for this research project under Contract No. NSC92-2216-E-006-030.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-μm square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved.

AB - The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-μm square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved.

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DO - 10.1016/j.tsf.2005.07.061

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SN - 0040-6090

VL - 498

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JO - Thin Solid Films

JF - Thin Solid Films

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T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

Abstract

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