Novel synthesis of B-doped Ti3C2Tx thin sheets via BF3 Lewis acid etching: Structural insights and Supercapacitor applications

Jeremiah Hao Ran Huang, Anil A. Kashale, Shih Wen Tseng, Jui Chin Lee, I. Wen Peter Chen

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The rising demand for energy storage spurs research on supercapacitor materials, valued for high-power density and long-term cycling, vital in industries. Among two-dimensional materials, MXene, with a general formula of Mn+1XnTx, where M represents early transition metals, X indicates C and/or N, Tx represents functionalized surface groups, and n = 1, 2, or 3, stands out as an ideal candidate for energy storage applications. Here, for the first time, we report the use of a Lewis acid, boron trifluoride (BF3), as an electron-deficient etchant in a sulfuric acid (H2SO4) solution for etching aluminum from the model system Ti3AlC2 MAX (M: transition metals, A: Al, X: carbon.), resulting in the formation of B-doped Ti3C2Tx MXene. Ex-Situ electrochemical X-ray diffraction (XRD) analysis showed reversible (002) plane changes in B-doped Ti3C2Tx MXene, from 5.72° to 7.0°, indicating ions intercalation and deintercalation, a first-time demonstration of significant ion transportation. Such fundamental insight determines that the specific capacitance of B-doped Ti3C2Tx MXene has found to be 396 F/g at current density of 1 A/g. This research introduces a novel synthesis approach aimed at understanding microstructural transformations of B-doped Ti3C2Tx MXene during electrochemical processes. This contributes to the advancement of MXene-based materials for future electrochemical applications.

Original languageEnglish
Article number235044
JournalJournal of Power Sources
Volume615
DOIs
Publication statusPublished - 2024 Sept 30

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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