Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs

Po Chun Lai; Chih Lung Lin; Jerzy Kanicki

doi:10.1109/TED.2018.2877945

Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs

Po Chun Lai, Chih Lung Lin, Jerzy Kanicki

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

This paper proposes amorphous indium- gallium-zinc oxide thin-film transistors (TFTs) fourtransistor- two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (V_TH) shifts and mobility variations, V_DD current-resistance (I -R) drops, and V_SS I -R-induced rises. Both the positive and negative V_TH of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT V_TH and mobility variations on the performance of 4T2C pixel circuit. Conventional twotransistor- one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the V_TH shifts of ±2 V, mobility variations of ±10%, V_DD I -R drops of 1 V, and V_SS I -R rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs.

Original language	English
Article number	8534405
Pages (from-to)	436-444
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2877945
Publication status	Published - 2019 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2877945

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title = "Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs",

abstract = "This paper proposes amorphous indium- gallium-zinc oxide thin-film transistors (TFTs) fourtransistor- two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (VTH) shifts and mobility variations, VDD current-resistance (I -R) drops, and VSS I -R-induced rises. Both the positive and negative VTH of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT VTH and mobility variations on the performance of 4T2C pixel circuit. Conventional twotransistor- one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the VTH shifts of ±2 V, mobility variations of ±10%, VDD I -R drops of 1 V, and VSS I -R rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs.",

author = "Lai, {Po Chun} and Lin, {Chih Lung} and Jerzy Kanicki",

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AB - This paper proposes amorphous indium- gallium-zinc oxide thin-film transistors (TFTs) fourtransistor- two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (VTH) shifts and mobility variations, VDD current-resistance (I -R) drops, and VSS I -R-induced rises. Both the positive and negative VTH of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT VTH and mobility variations on the performance of 4T2C pixel circuit. Conventional twotransistor- one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the VTH shifts of ±2 V, mobility variations of ±10%, VDD I -R drops of 1 V, and VSS I -R rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs.

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Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs

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