TY - JOUR
T1 - Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs
AU - Lai, Po Chun
AU - Lin, Chih Lung
AU - Kanicki, Jerzy
N1 - Funding Information:
Manuscript received August 31, 2018; accepted October 15, 2018. Date of publication November 14, 2018; date of current version December 24, 2018. This work was supported by the Ministry of Science and Technology of Taiwan under Project 106-2917-I-006-008. The review of this paper was arranged by Editor X. Guo. (Corresponding author: Jerzy Kanicki.) P.-C. Lai is with the Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, and also with the Displays and Detectors Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 USA (e-mail: n28021153@mail.ncku.edu.tw).
PY - 2019/1
Y1 - 2019/1
N2 - This paper proposes amorphous indium- gallium-zinc oxide thin-film transistors (TFTs) fourtransistor- two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (VTH) shifts and mobility variations, VDD current-resistance (I -R) drops, and VSS I -R-induced rises. Both the positive and negative VTH of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT VTH and mobility variations on the performance of 4T2C pixel circuit. Conventional twotransistor- one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the VTH shifts of ±2 V, mobility variations of ±10%, VDD I -R drops of 1 V, and VSS I -R rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs.
AB - This paper proposes amorphous indium- gallium-zinc oxide thin-film transistors (TFTs) fourtransistor- two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (VTH) shifts and mobility variations, VDD current-resistance (I -R) drops, and VSS I -R-induced rises. Both the positive and negative VTH of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT VTH and mobility variations on the performance of 4T2C pixel circuit. Conventional twotransistor- one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the VTH shifts of ±2 V, mobility variations of ±10%, VDD I -R drops of 1 V, and VSS I -R rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs.
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U2 - 10.1109/TED.2018.2877945
DO - 10.1109/TED.2018.2877945
M3 - Article
AN - SCOPUS:85056594771
VL - 66
SP - 436
EP - 444
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 1
M1 - 8534405
ER -