Novel top-down Cu filling of through silicon via (TSV) in 3-D integration

Ting Chia Weng, Jun Liang Lu, Shoou Jinn Chang, Ting Jen Hsueh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel Cu through silicon via (TSV) fabrication process without chemical mechanical polishing, temporary bonding, and de-bonding processes was presented. The study uses the new process to successfully manufacture the flat copper and copper pillar on the two sides respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.55 mΩ. The resistance characteristic of the copper matches the theory value.

Original languageEnglish
Title of host publication2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages125-126
Number of pages2
ISBN (Electronic)9781509003860
DOIs
Publication statusPublished - 2016 Jul 8
Event2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
Duration: 2016 May 232016 May 26

Publication series

Name2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
CountryUnited States
CitySan Jose
Period16-05-2316-05-26

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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