Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers

T. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, Jinn-Kong Sheu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thin p-doped InGaN layers on p-doped GaN were successfully used to demonstrate a new type of low-resistance ohmic contact. A significant reduction of specific contact resistance can be achieved by increasing the free-hole concentration and the probability for hole tunneling through the Schottky barrier as a consequence of polarization-induced band bending. As obtained from the transmission-line method, the specific contact resistances of Ni (10 nm)/Au (30 nm) contacts deposited on InGaN capping layers were 1.2 × 10-2 Ωcm2 and 6 × 10-3 Ωcm2 for capping layer thicknesses of 20 nm and 2 nm, respectively.

Original languageEnglish
Article number94
Pages (from-to)416-420
Number of pages5
JournalJournal of Electronic Materials
Volume31
Issue number5
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Ohmic contacts
Contact resistance
electric contacts
Polarization
contact resistance
Hole concentration
polarization
Electric lines
low resistance
transmission lines

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Gessmann, T. ; Li, Y. L. ; Waldron, E. L. ; Graff, J. W. ; Schubert, E. F. ; Sheu, Jinn-Kong. / Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers. In: Journal of Electronic Materials. 2002 ; Vol. 31, No. 5. pp. 416-420.
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Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers. / Gessmann, T.; Li, Y. L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, Jinn-Kong.

In: Journal of Electronic Materials, Vol. 31, No. 5, 94, 01.01.2002, p. 416-420.

Research output: Contribution to journalArticle

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AU - Gessmann, T.

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AB - Thin p-doped InGaN layers on p-doped GaN were successfully used to demonstrate a new type of low-resistance ohmic contact. A significant reduction of specific contact resistance can be achieved by increasing the free-hole concentration and the probability for hole tunneling through the Schottky barrier as a consequence of polarization-induced band bending. As obtained from the transmission-line method, the specific contact resistances of Ni (10 nm)/Au (30 nm) contacts deposited on InGaN capping layers were 1.2 × 10-2 Ωcm2 and 6 × 10-3 Ωcm2 for capping layer thicknesses of 20 nm and 2 nm, respectively.

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