Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers

T. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, Jinn-Kong Sheu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Thin p-doped InGaN layers on p-doped GaN were successfully used to demonstrate a new type of low-resistance ohmic contact. A significant reduction of specific contact resistance can be achieved by increasing the free-hole concentration and the probability for hole tunneling through the Schottky barrier as a consequence of polarization-induced band bending. As obtained from the transmission-line method, the specific contact resistances of Ni (10 nm)/Au (30 nm) contacts deposited on InGaN capping layers were 1.2 × 10-2 Ωcm2 and 6 × 10-3 Ωcm2 for capping layer thicknesses of 20 nm and 2 nm, respectively.

Original languageEnglish
Article number94
Pages (from-to)416-420
Number of pages5
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Novel type of ohmic contacts to p-doped GaN using polarization fields in thin In<sub>x</sub>Ga<sub>1-x</sub>N capping layers'. Together they form a unique fingerprint.

Cite this