Nucleation control for the growth of vertically aligned GaN nanowires

Wen Chi Hou, Tung Hsien Wu, Wei Che Tang, Franklin Chau Nan Hong

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN nanowires. In addition, the initial nucleation process is also found to play a key role in creating the high-quality homoepitaxy at the nanowire-substrate interface. By controlling the nucleation stage, the growth of highly aligned vertical GaN nanowire arrays can be achieved. The reasons for the observed effects are discussed.

Original languageEnglish
Article number373
JournalNanoscale Research Letters
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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