Numerical and experimental analsis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Hung Ming Chuang, Wen-Chau Liu, Wen Lung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications are comprehensively studied and demonstrated. Based on the detailed numerical tools, the insights into carrier transport of TEBT are investigated. Due to the employment of an appropriate tunneling emitter barrier, holes are confined effectively. So, the emitter injection efficiency is remarkably enhanced. Experimentally, the studied HBT with a thin tunneling barrier structure shows a very small offset voltage of 40mV and an extremely wide collector current operation regime. The low offset voltage is effective to improve amplifier efficiency at low power supply voltages. Furthermore, the operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultra-low collector current of 3.9×10-12A (1.56×10-7A/cm2). This is certainly suitable for low-voltage and low-power circuit applications.

Original languageEnglish
Title of host publicationIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
Pages287-288
Number of pages2
Publication statusPublished - 2004 Dec 1
EventIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings - Beijing, China
Duration: 2004 Sep 62004 Sep 10

Publication series

NameIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Other

OtherIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
CountryChina
CityBeijing
Period04-09-0604-09-10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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