Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes

Jia Chuan Lin; Shui Jinn Wang; Wan Rone Liou; Ying Che Luo; Ching Yuan Cheng

doi:10.1143/jjap.35.568

Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes

Jia Chuan Lin, Shui Jinn Wang, Wan Rone Liou, Ying Che Luo, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the 6-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5 × 10¹⁸ cm^-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.

Original language	English
Pages (from-to)	568-573
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	2 PART A
DOIs	https://doi.org/10.1143/jjap.35.568
Publication status	Published - 1996 Feb

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{7cfed92e8f1f4944a1f8d3013c8e7fac,

title = "Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes",

abstract = "In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the 6-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5 × 1018 cm-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.",

author = "Lin, {Jia Chuan} and Wang, {Shui Jinn} and Liou, {Wan Rone} and Luo, {Ying Che} and Cheng, {Ching Yuan}",

year = "1996",

month = feb,

doi = "10.1143/jjap.35.568",

language = "English",

volume = "35",

pages = "568--573",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 PART A",

}

Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes. / Lin, Jia Chuan; Wang, Shui Jinn; Liou, Wan Rone; Luo, Ying Che; Cheng, Ching Yuan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 2 PART A, 02.1996, p. 568-573.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes

AU - Lin, Jia Chuan

AU - Wang, Shui Jinn

AU - Liou, Wan Rone

AU - Luo, Ying Che

AU - Cheng, Ching Yuan

PY - 1996/2

Y1 - 1996/2

N2 - In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the 6-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5 × 1018 cm-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.

AB - In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the 6-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5 × 1018 cm-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.

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