Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance

J. Jo; H. S. Li; Y. W. Chen; K. L. Wang

doi:10.1063/1.111642

Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance

J. Jo, H. S. Li, Y. W. Chen, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Capacitance-voltage measurements of double barrier In_0.53Ga _0.47As/AlAs resonant tunneling diodes show a large capacitance peak at a bias near resonance. The measured peak capacitance is about five times larger than the calculated depletion capacitance. This large capacitance is interpreted as the capacitance between the emitter and the quantum well, which is activated near resonance only when the quantum well has a sufficient number of electrons to screen the ac electric field. An equivalent circuit with the new added series RC component is proposed and the effect on the high frequency operation of a resonant tunneling diode is discussed.

Original language	English
Pages (from-to)	2276-2278
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	17
DOIs	https://doi.org/10.1063/1.111642
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111642

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abstract = "Capacitance-voltage measurements of double barrier In0.53Ga 0.47As/AlAs resonant tunneling diodes show a large capacitance peak at a bias near resonance. The measured peak capacitance is about five times larger than the calculated depletion capacitance. This large capacitance is interpreted as the capacitance between the emitter and the quantum well, which is activated near resonance only when the quantum well has a sufficient number of electrons to screen the ac electric field. An equivalent circuit with the new added series RC component is proposed and the effect on the high frequency operation of a resonant tunneling diode is discussed.",

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AU - Jo, J.

AU - Li, H. S.

AU - Chen, Y. W.

AU - Wang, K. L.

PY - 1994

Y1 - 1994

N2 - Capacitance-voltage measurements of double barrier In0.53Ga 0.47As/AlAs resonant tunneling diodes show a large capacitance peak at a bias near resonance. The measured peak capacitance is about five times larger than the calculated depletion capacitance. This large capacitance is interpreted as the capacitance between the emitter and the quantum well, which is activated near resonance only when the quantum well has a sufficient number of electrons to screen the ac electric field. An equivalent circuit with the new added series RC component is proposed and the effect on the high frequency operation of a resonant tunneling diode is discussed.

AB - Capacitance-voltage measurements of double barrier In0.53Ga 0.47As/AlAs resonant tunneling diodes show a large capacitance peak at a bias near resonance. The measured peak capacitance is about five times larger than the calculated depletion capacitance. This large capacitance is interpreted as the capacitance between the emitter and the quantum well, which is activated near resonance only when the quantum well has a sufficient number of electrons to screen the ac electric field. An equivalent circuit with the new added series RC component is proposed and the effect on the high frequency operation of a resonant tunneling diode is discussed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

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Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance

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