Observation of bias-dependent capture-emission processes in MBE-grown GaAs layers

Wei-Chou Hsu, C. Y. Chang, S. S. Hau, Shui-Jinn Wang

Research output: Contribution to journalArticle

Abstract

The capture-emission process in a semiconductor sample was greatly affected by a varying electric field in DLTS analysis. The sample was an n-type GaAs layer grown on a 〈100〉-oriented seimi-insulating substrate by molecular beam epitaxy. An Ec - 0.5 eV electron trap level was found under lower bias voltage (-6 V) while both Ec - 0.40 eV and Ec - 0.50 eV traps were observed under higher bias voltage (-7.0 to -8.0 V). Emission rates have been measured that increased with increasing bias voltage from 0 V to -5 V and then decreased when biases were higher than -5 V. In the capacitance transient, when it revealed a delay, two levels, namely at -0.4 and -0.5 eV, appeared in the DLTS signals. However, the EL2 trap (Ec - 0.78 eV), found on another sample, revealed monotonically increasing emission with increasing bias. An explanation of these phenomena was proposed in light of the interaction of these two levels due to the electric field effect.

Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalSolid State Electronics
Volume30
Issue number2
DOIs
Publication statusPublished - 1987 Jan 1

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Bias voltage
Molecular beam epitaxy
Deep level transient spectroscopy
Electric field effects
traps
Electron traps
electric potential
Capacitance
Electric fields
electric fields
Semiconductor materials
Substrates
molecular beam epitaxy
capacitance
gallium arsenide
electrons
interactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Observation of bias-dependent capture-emission processes in MBE-grown GaAs layers",
abstract = "The capture-emission process in a semiconductor sample was greatly affected by a varying electric field in DLTS analysis. The sample was an n-type GaAs layer grown on a 〈100〉-oriented seimi-insulating substrate by molecular beam epitaxy. An Ec - 0.5 eV electron trap level was found under lower bias voltage (-6 V) while both Ec - 0.40 eV and Ec - 0.50 eV traps were observed under higher bias voltage (-7.0 to -8.0 V). Emission rates have been measured that increased with increasing bias voltage from 0 V to -5 V and then decreased when biases were higher than -5 V. In the capacitance transient, when it revealed a delay, two levels, namely at -0.4 and -0.5 eV, appeared in the DLTS signals. However, the EL2 trap (Ec - 0.78 eV), found on another sample, revealed monotonically increasing emission with increasing bias. An explanation of these phenomena was proposed in light of the interaction of these two levels due to the electric field effect.",
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Observation of bias-dependent capture-emission processes in MBE-grown GaAs layers. / Hsu, Wei-Chou; Chang, C. Y.; Hau, S. S.; Wang, Shui-Jinn.

In: Solid State Electronics, Vol. 30, No. 2, 01.01.1987, p. 221-226.

Research output: Contribution to journalArticle

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