Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

H. S. Hsu, P. Y. Chung, J. H. Zhang, S. J. Sun, H. Chou, H. C. Su, C. H. Lee, J. Chen, J. C.A. Huang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

Original languageEnglish
Article number032503
JournalApplied Physics Letters
Volume97
Issue number3
DOIs
Publication statusPublished - 2010 Jul 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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