Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

H. S. Hsu; P. Y. Chung; J. H. Zhang; S. J. Sun; H. Chou; H. C. Su; C. H. Lee; J. Chen; J. C.A. Huang

doi:10.1063/1.3467044

Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

H. S. Hsu, P. Y. Chung, J. H. Zhang, S. J. Sun, H. Chou, H. C. Su, C. H. Lee, J. Chen, J. C.A. Huang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp² states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

Original language	English
Article number	032503
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467044
Publication status	Published - 2010 Jul 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3467044

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title = "Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films",

abstract = "We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.",

author = "Hsu, {H. S.} and Chung, {P. Y.} and Zhang, {J. H.} and Sun, {S. J.} and H. Chou and Su, {H. C.} and Lee, {C. H.} and J. Chen and Huang, {J. C.A.}",

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T1 - Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

AU - Hsu, H. S.

AU - Chung, P. Y.

AU - Zhang, J. H.

AU - Sun, S. J.

AU - Chou, H.

AU - Su, H. C.

AU - Lee, C. H.

AU - Chen, J.

AU - Huang, J. C.A.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

AB - We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

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