Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

David M. Joseph, Rajappan Balagopal, Robert F. Hicks, Laurence P. Sadwick, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm-1 with a shoulder at 2950 cm-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.

Original languageEnglish
Pages (from-to)2203-2204
Number of pages2
JournalApplied Physics Letters
Volume53
Issue number22
DOIs
Publication statusPublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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