Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

David M. Joseph; Rajappan Balagopal; Robert F. Hicks; Laurence P. Sadwick; Kang L. Wang

doi:10.1063/1.100281

Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

David M. Joseph
, Rajappan Balagopal
, Robert F. Hicks
, Laurence P. Sadwick
, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm^-1 with a shoulder at 2950 cm^-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH₃ and/or CH₂ groups.

Original language	English
Pages (from-to)	2203-2204
Number of pages	2
Journal	Applied Physics Letters
Volume	53
Issue number	22
DOIs	https://doi.org/10.1063/1.100281
Publication status	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100281

Cite this

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title = "Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy",

abstract = "Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm-1 with a shoulder at 2950 cm-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.",

author = "Joseph, \{David M.\} and Rajappan Balagopal and Hicks, \{Robert F.\} and Sadwick, \{Laurence P.\} and Wang, \{Kang L.\}",

year = "1988",

doi = "10.1063/1.100281",

language = "English",

volume = "53",

pages = "2203--2204",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

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T1 - Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

AU - Joseph, David M.

AU - Balagopal, Rajappan

AU - Hicks, Robert F.

AU - Sadwick, Laurence P.

AU - Wang, Kang L.

PY - 1988

Y1 - 1988

N2 - Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm-1 with a shoulder at 2950 cm-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.

AB - Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm-1 with a shoulder at 2950 cm-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.

UR - https://www.scopus.com/pages/publications/0003902496

UR - https://www.scopus.com/pages/publications/0003902496#tab=citedBy

U2 - 10.1063/1.100281

DO - 10.1063/1.100281

M3 - Article

AN - SCOPUS:0003902496

SN - 0003-6951

VL - 53

SP - 2203

EP - 2204

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

Abstract

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