TY - JOUR
T1 - Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
AU - Wen, T. C.
AU - Lee, W. I.
AU - Sheu, J. K.
AU - Chi, G. C.
N1 - Funding Information:
The authors would like to thank the Industrial Technology Research Institute and National Science Council of the Republic of China for financially supporting this research under contract no. NSC 88-2218-E-009-050.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2002/4
Y1 - 2002/4
N2 - This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet etching. A mixture of H2SO4 and H3PO4 was used as an etching solution. SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM images show the flat, smooth surface without any pits or hillocks. After the chemical etching, hexagonal shaped etch pits were observed at the edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the "window" region and the coalescent line of two growing fronts. In contrast, the overgrowth region was nearly free of etch pits. Moreover, we observed that different sizes of etch pits dominated in "window" region and coalescent region. This implied different types dislocations dominated in these regions.
AB - This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet etching. A mixture of H2SO4 and H3PO4 was used as an etching solution. SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM images show the flat, smooth surface without any pits or hillocks. After the chemical etching, hexagonal shaped etch pits were observed at the edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the "window" region and the coalescent line of two growing fronts. In contrast, the overgrowth region was nearly free of etch pits. Moreover, we observed that different sizes of etch pits dominated in "window" region and coalescent region. This implied different types dislocations dominated in these regions.
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U2 - 10.1016/S0038-1101(01)00256-8
DO - 10.1016/S0038-1101(01)00256-8
M3 - Article
AN - SCOPUS:0036533115
SN - 0038-1101
VL - 46
SP - 555
EP - 558
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 4
ER -