Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

Zong Han Lin; Yeong Her Wang

doi:10.1063/1.4960525

Observation of indium ion migration-induced resistive switching in Al/Mg_0.5Ca_0.5TiO₃/ITO

Zong Han Lin, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg_0.5Ca_0.5TiO₃ (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In₂O₃ crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In³⁺ ion migration is proposed. In³⁺ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

Original language	English
Article number	053507
Journal	Applied Physics Letters
Volume	109
Issue number	5
DOIs	https://doi.org/10.1063/1.4960525
Publication status	Published - 2016 Aug 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4960525

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title = "Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO",

abstract = "Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.",

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AU - Lin, Zong Han

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Y1 - 2016/8/1

N2 - Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

AB - Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

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Observation of indium ion migration-induced resistive switching in Al/Mg_0.5Ca_0.5TiO₃/ITO

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