Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

Zong Han Lin, Yeong-Her Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

Original languageEnglish
Article number053507
JournalApplied Physics Letters
Volume109
Issue number5
DOIs
Publication statusPublished - 2016 Aug 1

Fingerprint

random access memory
ITO (semiconductors)
indium
filaments
ions
electrodes
low resistance
cards
diffraction
indium oxides
tin oxides
transmission electron microscopy
high resolution
spectroscopy
crystals
x rays
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{42a90aba6e5c4e49a9cd704912bbbac1,
title = "Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO",
abstract = "Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.",
author = "Lin, {Zong Han} and Yeong-Her Wang",
year = "2016",
month = "8",
day = "1",
doi = "10.1063/1.4960525",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO. / Lin, Zong Han; Wang, Yeong-Her.

In: Applied Physics Letters, Vol. 109, No. 5, 053507, 01.08.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

AU - Lin, Zong Han

AU - Wang, Yeong-Her

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

AB - Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In3+ ion migration is proposed. In3+ ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

UR - http://www.scopus.com/inward/record.url?scp=84981266347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981266347&partnerID=8YFLogxK

U2 - 10.1063/1.4960525

DO - 10.1063/1.4960525

M3 - Article

AN - SCOPUS:84981266347

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053507

ER -