Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

F. A. Baron; Y. Znang; K. L. Wang

doi:10.1063/1.1576295

Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

F. A. Baron, Y. Znang, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The observation of the source current of p-channel MOS transistors was studied. The source current vanishes when the temperature exceeds 11 K. The source current can be increased as the transistors are exposed to a high magnetic field perpendicular to the channel. Both drain voltage and magnetic field result in the emerging and splitting of the source current peaks.

Original language	English
Pages (from-to)	3547-3549
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1576295
Publication status	Published - 2003 May 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1576295

Cite this

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title = "Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors",

abstract = "The observation of the source current of p-channel MOS transistors was studied. The source current vanishes when the temperature exceeds 11 K. The source current can be increased as the transistors are exposed to a high magnetic field perpendicular to the channel. Both drain voltage and magnetic field result in the emerging and splitting of the source current peaks.",

author = "Baron, \{F. A.\} and Y. Znang and Wang, \{K. L.\}",

year = "2003",

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T1 - Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

AU - Baron, F. A.

AU - Znang, Y.

AU - Wang, K. L.

PY - 2003/5/19

Y1 - 2003/5/19

N2 - The observation of the source current of p-channel MOS transistors was studied. The source current vanishes when the temperature exceeds 11 K. The source current can be increased as the transistors are exposed to a high magnetic field perpendicular to the channel. Both drain voltage and magnetic field result in the emerging and splitting of the source current peaks.

AB - The observation of the source current of p-channel MOS transistors was studied. The source current vanishes when the temperature exceeds 11 K. The source current can be increased as the transistors are exposed to a high magnetic field perpendicular to the channel. Both drain voltage and magnetic field result in the emerging and splitting of the source current peaks.

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U2 - 10.1063/1.1576295

DO - 10.1063/1.1576295

M3 - Article

AN - SCOPUS:0038319017

SN - 0003-6951

VL - 82

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EP - 3549

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

Abstract

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