Observation of N- and S-shaped negative differential resistance behavior in AlGaAs/GaAs resonant tunneling structure

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Abstract

A MBE-grown two-terminal GaAs device with AlGaAs/GaAs quantum wells embedded in the base of a heterojunction bipolar transistor structure exhibiting both S-shaped and N-shaped negative differential resistance (NDR) characteristics is demonstrated. Due to the asymmetric structure, both S-and N-shaped NDR behaviors can be observed in the same device depending on the polarity applied. The S-shaped NDR behavior is explained by the enhancement of an avalanche process while the N-shaped NDR characteristics is attributed to a resonant tunneling process. The effects of band offset of AlGaAs/GaAs in the emitter/base and/or base/collector junction are found to have profound influence on the device characteristics and will be discussed.

Original languageEnglish
Pages (from-to)413-418
Number of pages6
JournalSolid State Electronics
Volume34
Issue number4
DOIs
Publication statusPublished - 1991 Jan 1

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Resonant tunneling
Heterojunction bipolar transistors
resonant tunneling
Molecular beam epitaxy
Semiconductor quantum wells
aluminum gallium arsenides
bipolar transistors
accumulators
avalanches
heterojunctions
polarity
emitters
quantum wells
gallium arsenide
augmentation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Observation of N- and S-shaped negative differential resistance behavior in AlGaAs/GaAs resonant tunneling structure",
abstract = "A MBE-grown two-terminal GaAs device with AlGaAs/GaAs quantum wells embedded in the base of a heterojunction bipolar transistor structure exhibiting both S-shaped and N-shaped negative differential resistance (NDR) characteristics is demonstrated. Due to the asymmetric structure, both S-and N-shaped NDR behaviors can be observed in the same device depending on the polarity applied. The S-shaped NDR behavior is explained by the enhancement of an avalanche process while the N-shaped NDR characteristics is attributed to a resonant tunneling process. The effects of band offset of AlGaAs/GaAs in the emitter/base and/or base/collector junction are found to have profound influence on the device characteristics and will be discussed.",
author = "Yeong-Her Wang and Mau-phon Houng and Wei, {H. C.}",
year = "1991",
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T1 - Observation of N- and S-shaped negative differential resistance behavior in AlGaAs/GaAs resonant tunneling structure

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

AU - Wei, H. C.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - A MBE-grown two-terminal GaAs device with AlGaAs/GaAs quantum wells embedded in the base of a heterojunction bipolar transistor structure exhibiting both S-shaped and N-shaped negative differential resistance (NDR) characteristics is demonstrated. Due to the asymmetric structure, both S-and N-shaped NDR behaviors can be observed in the same device depending on the polarity applied. The S-shaped NDR behavior is explained by the enhancement of an avalanche process while the N-shaped NDR characteristics is attributed to a resonant tunneling process. The effects of band offset of AlGaAs/GaAs in the emitter/base and/or base/collector junction are found to have profound influence on the device characteristics and will be discussed.

AB - A MBE-grown two-terminal GaAs device with AlGaAs/GaAs quantum wells embedded in the base of a heterojunction bipolar transistor structure exhibiting both S-shaped and N-shaped negative differential resistance (NDR) characteristics is demonstrated. Due to the asymmetric structure, both S-and N-shaped NDR behaviors can be observed in the same device depending on the polarity applied. The S-shaped NDR behavior is explained by the enhancement of an avalanche process while the N-shaped NDR characteristics is attributed to a resonant tunneling process. The effects of band offset of AlGaAs/GaAs in the emitter/base and/or base/collector junction are found to have profound influence on the device characteristics and will be discussed.

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JF - Solid-State Electronics

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