Observation of negative differential resistance in a Si/Ge0.4Si0.6/boron δ-doped Si heterostructure

Shui Jinn Wang; San Lien Wu

Observation of negative differential resistance in a Si/Ge_0.4Si_0.6/boron δ-doped Si heterostructure

Shui Jinn Wang, San Lien Wu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, observation of the negative differential resistance (NDR) phenomenon in a three-terminal pseudomorphic i-Si/i-Ge_0.4Si_0.6δ-doped-Si heterostructure is reported. The proposed structure offers high hole mobility of about 2650 cm²/V·s at 77 K in the Ge_0.4Si_0.6 channel and shows a pronounced NDR property in the drain-source I-V characteristics. The measured onset drain-source voltage of the NDR region is found to be within a range of 0.9 to approximately 1.4 V, which strongly depends on the collector voltage. Real-space transfer (RST) of light holes between the channel and collector regions is shown to be responsible for the observed NDR characteristics. Experiment results and the device operation are described. In addition, the influence of the drain-collector leakage current, due to a non-ideal undoped layer, on the NDR behavior is analyzed.

Original language	English
Pages (from-to)	425-430
Number of pages	6
Journal	Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
Volume	22
Issue number	3
Publication status	Published - 1998 May

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Observation of negative differential resistance in a Si/Ge0.4Si0.6/boron δ-doped Si heterostructure",

abstract = "In this paper, observation of the negative differential resistance (NDR) phenomenon in a three-terminal pseudomorphic i-Si/i-Ge0.4Si0.6δ-doped-Si heterostructure is reported. The proposed structure offers high hole mobility of about 2650 cm2/V·s at 77 K in the Ge0.4Si0.6 channel and shows a pronounced NDR property in the drain-source I-V characteristics. The measured onset drain-source voltage of the NDR region is found to be within a range of 0.9 to approximately 1.4 V, which strongly depends on the collector voltage. Real-space transfer (RST) of light holes between the channel and collector regions is shown to be responsible for the observed NDR characteristics. Experiment results and the device operation are described. In addition, the influence of the drain-collector leakage current, due to a non-ideal undoped layer, on the NDR behavior is analyzed.",

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year = "1998",

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T1 - Observation of negative differential resistance in a Si/Ge0.4Si0.6/boron δ-doped Si heterostructure

AU - Wang, Shui Jinn

AU - Wu, San Lien

PY - 1998/5

Y1 - 1998/5

N2 - In this paper, observation of the negative differential resistance (NDR) phenomenon in a three-terminal pseudomorphic i-Si/i-Ge0.4Si0.6δ-doped-Si heterostructure is reported. The proposed structure offers high hole mobility of about 2650 cm2/V·s at 77 K in the Ge0.4Si0.6 channel and shows a pronounced NDR property in the drain-source I-V characteristics. The measured onset drain-source voltage of the NDR region is found to be within a range of 0.9 to approximately 1.4 V, which strongly depends on the collector voltage. Real-space transfer (RST) of light holes between the channel and collector regions is shown to be responsible for the observed NDR characteristics. Experiment results and the device operation are described. In addition, the influence of the drain-collector leakage current, due to a non-ideal undoped layer, on the NDR behavior is analyzed.

AB - In this paper, observation of the negative differential resistance (NDR) phenomenon in a three-terminal pseudomorphic i-Si/i-Ge0.4Si0.6δ-doped-Si heterostructure is reported. The proposed structure offers high hole mobility of about 2650 cm2/V·s at 77 K in the Ge0.4Si0.6 channel and shows a pronounced NDR property in the drain-source I-V characteristics. The measured onset drain-source voltage of the NDR region is found to be within a range of 0.9 to approximately 1.4 V, which strongly depends on the collector voltage. Real-space transfer (RST) of light holes between the channel and collector regions is shown to be responsible for the observed NDR characteristics. Experiment results and the device operation are described. In addition, the influence of the drain-collector leakage current, due to a non-ideal undoped layer, on the NDR behavior is analyzed.

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Observation of negative differential resistance in a Si/Ge_0.4Si_0.6/boron δ-doped Si heterostructure

Abstract

All Science Journal Classification (ASJC) codes

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