Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

Y. H. Wang; K. Tai; Y. F. Hsieh; S. N.G. Chu; J. D. Wynn; A. Y. Cho

doi:10.1063/1.104086

Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

Y. H. Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, A. Y. Cho

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al_0.1Ga_0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm² were measured with an emission efficiency of 0.2 mW/mA.

Original language	English
Pages (from-to)	1613-1615
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	16
DOIs	https://doi.org/10.1063/1.104086
Publication status	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.104086

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title = "Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates",

abstract = "GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.",

author = "Wang, {Y. H.} and K. Tai and Hsieh, {Y. F.} and Chu, {S. N.G.} and Wynn, {J. D.} and Cho, {A. Y.}",

year = "1990",

doi = "10.1063/1.104086",

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volume = "57",

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T1 - Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

AU - Wang, Y. H.

AU - Tai, K.

AU - Hsieh, Y. F.

AU - Chu, S. N.G.

AU - Wynn, J. D.

AU - Cho, A. Y.

PY - 1990

Y1 - 1990

N2 - GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.

AB - GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.

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Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

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