Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

Yeong-Her Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, A. Y. Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.

Original languageEnglish
Pages (from-to)1613-1615
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
Publication statusPublished - 1990 Dec 1

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surface emitting lasers
threshold currents
aluminum gallium arsenides
Bragg reflectors
cavities
molecular beam epitaxy
current density
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates",
abstract = "GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50{\%} less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.",
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Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates. / Wang, Yeong-Her; Tai, K.; Hsieh, Y. F.; Chu, S. N.G.; Wynn, J. D.; Cho, A. Y.

In: Applied Physics Letters, Vol. 57, No. 16, 01.12.1990, p. 1613-1615.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

AU - Wang, Yeong-Her

AU - Tai, K.

AU - Hsieh, Y. F.

AU - Chu, S. N.G.

AU - Wynn, J. D.

AU - Cho, A. Y.

PY - 1990/12/1

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AB - GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.

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