Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates

Y. H. Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, A. Y. Cho

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4 Citations (Scopus)

Abstract

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.

Original languageEnglish
Pages (from-to)1613-1615
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
Publication statusPublished - 1990 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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