Observation of spontaneous ordering in the optoelectronic material GalnNP

Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang, H. P. Hsu

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8 Citations (Scopus)

Abstract

High resolution x-ray rocking curve analysis and photoluminescence measurements were used to characterize the dilute nitrogen incorporation in GaInP system. Photoluminescence measurement was carried out at room temperature using the 514.5 nm line of an Ar+ laser as the excitation source. The anisotropic properties of the polarized piezoreflectance spectra features near band edge indicated the existence of some degree of ordering for the Ga0.46In0.54NxP1-x epitaxial layers. The spontaneous ordering was confirmed by high resolution transmission electron microscopy image, which showed ordering-induced superlattice-like patterns.

Original languageEnglish
Pages (from-to)1299-1301
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number8
DOIs
Publication statusPublished - 2004 Feb 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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