Observation of spontaneous ordering in the optoelectronic material GalnNP

Y. K. Su; C. H. Wu; S. H. Hsu; S. J. Chang; W. C. Chen; Y. S. Huang; H. P. Hsu

doi:10.1063/1.1650045

Observation of spontaneous ordering in the optoelectronic material GalnNP

Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang, H. P. Hsu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

High resolution x-ray rocking curve analysis and photoluminescence measurements were used to characterize the dilute nitrogen incorporation in GaInP system. Photoluminescence measurement was carried out at room temperature using the 514.5 nm line of an Ar⁺ laser as the excitation source. The anisotropic properties of the polarized piezoreflectance spectra features near band edge indicated the existence of some degree of ordering for the Ga_0.46In_0.54N_xP_1-x epitaxial layers. The spontaneous ordering was confirmed by high resolution transmission electron microscopy image, which showed ordering-induced superlattice-like patterns.

Original language	English
Pages (from-to)	1299-1301
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	8
DOIs	https://doi.org/10.1063/1.1650045
Publication status	Published - 2004 Feb 23

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1650045

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title = "Observation of spontaneous ordering in the optoelectronic material GalnNP",

abstract = "High resolution x-ray rocking curve analysis and photoluminescence measurements were used to characterize the dilute nitrogen incorporation in GaInP system. Photoluminescence measurement was carried out at room temperature using the 514.5 nm line of an Ar+ laser as the excitation source. The anisotropic properties of the polarized piezoreflectance spectra features near band edge indicated the existence of some degree of ordering for the Ga0.46In0.54NxP1-x epitaxial layers. The spontaneous ordering was confirmed by high resolution transmission electron microscopy image, which showed ordering-induced superlattice-like patterns.",

author = "Su, {Y. K.} and Wu, {C. H.} and Hsu, {S. H.} and Chang, {S. J.} and Chen, {W. C.} and Huang, {Y. S.} and Hsu, {H. P.}",

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doi = "10.1063/1.1650045",

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T1 - Observation of spontaneous ordering in the optoelectronic material GalnNP

AU - Su, Y. K.

AU - Wu, C. H.

AU - Hsu, S. H.

AU - Chang, S. J.

AU - Chen, W. C.

AU - Huang, Y. S.

AU - Hsu, H. P.

PY - 2004/2/23

Y1 - 2004/2/23

N2 - High resolution x-ray rocking curve analysis and photoluminescence measurements were used to characterize the dilute nitrogen incorporation in GaInP system. Photoluminescence measurement was carried out at room temperature using the 514.5 nm line of an Ar+ laser as the excitation source. The anisotropic properties of the polarized piezoreflectance spectra features near band edge indicated the existence of some degree of ordering for the Ga0.46In0.54NxP1-x epitaxial layers. The spontaneous ordering was confirmed by high resolution transmission electron microscopy image, which showed ordering-induced superlattice-like patterns.

AB - High resolution x-ray rocking curve analysis and photoluminescence measurements were used to characterize the dilute nitrogen incorporation in GaInP system. Photoluminescence measurement was carried out at room temperature using the 514.5 nm line of an Ar+ laser as the excitation source. The anisotropic properties of the polarized piezoreflectance spectra features near band edge indicated the existence of some degree of ordering for the Ga0.46In0.54NxP1-x epitaxial layers. The spontaneous ordering was confirmed by high resolution transmission electron microscopy image, which showed ordering-induced superlattice-like patterns.

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JF - Applied Physics Letters

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Observation of spontaneous ordering in the optoelectronic material GalnNP

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