Observation of the anomalous current-voltage characteristics of GaAs/n +-InGaAs/GaAs doped-channel structure

Wen Chau Liu, Lih Wen Laih, Jung Hui Tsai, Wei Chou Hsu, Cheng Zu Wu, Kong Beng Thei, Wen Shiung Lour

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about -3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS <-1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current-voltage characteristics under higher gate-source bias (VGS≥-1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect.

Original languageEnglish
Pages (from-to)404
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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