A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about -3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS <-1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current-voltage characteristics under higher gate-source bias (VGS≥-1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)