An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105 °C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In xGa 1-xAs subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering