Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In xGa 1-xAs quantum wells

Wen Chau Liu; Lih Wen Laih; Cheng Zu Wu; Shiou Ying Cheng; Jung Hui Tsai

doi:10.1109/55.563305

Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In _xGa _1-xAs quantum wells

Wen Chau Liu, Lih Wen Laih, Cheng Zu Wu, Shiou Ying Cheng, Jung Hui Tsai

Research output: Contribution to journal › Article › peer-review

Abstract

An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105 °C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In _xGa _1-xAs subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.

Original language	English
Pages (from-to)	129-131
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	4
DOIs	https://doi.org/10.1109/55.563305
Publication status	Published - 1997 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{420be15b364547028751d6f2d5cac162,

title = "Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In xGa 1-xAs quantum wells",

abstract = "An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105 °C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In xGa 1-xAs subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the {"}insulated{"} AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.",

author = "Liu, {Wen Chau} and Laih, {Lih Wen} and Wu, {Cheng Zu} and Cheng, {Shiou Ying} and Tsai, {Jung Hui}",

year = "1997",

month = apr,

day = "1",

doi = "10.1109/55.563305",

language = "English",

volume = "18",

pages = "129--131",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In _xGa _1-xAs quantum wells. / Liu, Wen Chau; Laih, Lih Wen; Wu, Cheng Zu; Cheng, Shiou Ying; Tsai, Jung Hui.

In: IEEE Electron Device Letters, Vol. 18, No. 4, 01.04.1997, p. 129-131.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In xGa 1-xAs quantum wells

AU - Liu, Wen Chau

AU - Laih, Lih Wen

AU - Wu, Cheng Zu

AU - Cheng, Shiou Ying

AU - Tsai, Jung Hui

PY - 1997/4/1

Y1 - 1997/4/1

N2 - An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105 °C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In xGa 1-xAs subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.

AB - An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105 °C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In xGa 1-xAs subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.

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