Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor

Wei Chou Wang, Hsi Jen Pan, Kong Beng Thei, Kun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng, Lih Wen Laih, Shiou Ying Cheng, Wen Chau Liu

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8 Citations (Scopus)

Abstract

The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature.In addition, the temperature-dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base-emitter and base-collector turn-on voltages are -2 and -3 mV K-1, respectively. The ideality factors of base current (nB) and collector current (nc) exhibit negative temperature coefficients. nB≈1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.

Original languageEnglish
Pages (from-to)935-940
Number of pages6
JournalSemiconductor Science and Technology
Volume15
Issue number9
DOIs
Publication statusPublished - 2000 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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