In this letter, ON-resistance RON degradation in lateral double-diffused MOS transistors is observed when the device is operated under OFF-state avalanche-breakdown condition. Although interface states and positive oxide-trapped charges are created near the drain, interface-state generation is identified to be the main degradation mechanism. Technology computer-aided design simulation suggests that the driving force of damage is breakdown-induced hole injection. Experimental data show that RON degradation has the tendency to saturate, in agreement with the saturation of interface-state generation and oxide-trapped charges data extracted by charge-pumping measurement.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering