Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors

Kuo Hui Yu, Kun Wei Lin, Shiou Ying Cheng, Chin Chuan Cheng, Jing Yuh Chen, Cheng Zu Wu, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

In this work, the off-state breakdown characteristics of two different types of InGaP-based high-barrier gate heterostructure field-effect transistors are studied and demonstrated. These devices have different high-barrier gate structures, e.g. the i-InGaP layer for device A and n + -GaAs/p + -InGaP/n-GaAs camel-like structure for device B. The wide-gap InGaP layer is used to improve the breakdown characteristics. Experimentally, the studied devices show high off-state breakdown characteristics even at high temperature operation regime. This indicates that the studied devices are suitable for high-power and high-temperature applications. In addition, the off-state breakdown mechanisms are different for device A and B. For device A, off-state breakdown characteristics is only gate dominated at the temperature regime from 30 to 180°C. For device B, off-state breakdown characteristics are gate and channel dominated at 30°C and only gate dominated within 150 to 210°C.

Original languageEnglish
Pages (from-to)231-239
Number of pages9
JournalSuperlattices and Microstructures
Volume30
Issue number5
DOIs
Publication statusPublished - 2001 Jan 1

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High temperature operations
High temperature applications
High electron mobility transistors
field effect transistors
breakdown
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Yu, Kuo Hui ; Lin, Kun Wei ; Cheng, Shiou Ying ; Cheng, Chin Chuan ; Chen, Jing Yuh ; Wu, Cheng Zu ; Liu, Wen-Chau. / Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors. In: Superlattices and Microstructures. 2001 ; Vol. 30, No. 5. pp. 231-239.
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Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors. / Yu, Kuo Hui; Lin, Kun Wei; Cheng, Shiou Ying; Cheng, Chin Chuan; Chen, Jing Yuh; Wu, Cheng Zu; Liu, Wen-Chau.

In: Superlattices and Microstructures, Vol. 30, No. 5, 01.01.2001, p. 231-239.

Research output: Contribution to journalArticle

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