Off-state breakdown modeling for high-Schottky-barrier δ-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor

Ching Sung Lee, Wei Chou Hsu

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Abstract

An off-state two-terminal gate-drain current model has been proposed to investigate the breakdown phenomenon for δ-doped high electron mobility transistors (δ-HEMTs) with a high Schottky barrier. The proposed model is based on the integrated mechanisms of thermionic-field emission theory for gate-barrier tunneling and impact ionization multiplication within the channel regime by self-consistently solving the 2-D Poisson equation. Explicit mathematical expressions have been derived to provide an efficient estimation of breakdown criteria and illustrations of sophisticated breakdown characteristics. Calculations of breakdown criteria for δ-HEMTs with a high Schottky barrier, including Au/In0.49Ga0.51P and Au/In0.34Al0.66As0.85Sb0.15, have also been verified and discussed. This model is suitable for the implementation of computer-aided design (CAD) design tools.

Original languageEnglish
Pages (from-to)4253-4256
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number7 A
DOIs
Publication statusPublished - 2003 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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