Ohmic contact to p-ZnSe and p-ZnMgSSe

S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan, H. Chang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

Original languageEnglish
Pages (from-to)1280-1281
Number of pages2
JournalElectronics Letters
Volume35
Issue number15
DOIs
Publication statusPublished - 1999 Jul 22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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