Ohmic contact to p-ZnSe and p-ZnMgSSe

S. J. Chang; W. R. Chen; Y. K. Su; R. C. Tu; W. H. Lan; H. Chang

doi:10.1049/el:19990835

Ohmic contact to p-ZnSe and p-ZnMgSSe

S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan, H. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10^-1Ωcm² after a simple voltage stress. The authors have also deposited Ge₃Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10^-5 Ωcm² and 3.8 × 10^-5 Ωcm² for the as-deposited Cu₃Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu₃Ge/Pt/Au on p-ZnSe is much more stable than the Cu₃Ge/Pt/Au on p-ZnMgSSe.

Original language	English
Pages (from-to)	1280-1281
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	15
DOIs	https://doi.org/10.1049/el:19990835
Publication status	Published - 1999 Jul 22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990835

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title = "Ohmic contact to p-ZnSe and p-ZnMgSSe",

abstract = "The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.",

author = "Chang, {S. J.} and Chen, {W. R.} and Su, {Y. K.} and Tu, {R. C.} and Lan, {W. H.} and H. Chang",

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TY - JOUR

T1 - Ohmic contact to p-ZnSe and p-ZnMgSSe

AU - Chang, S. J.

AU - Chen, W. R.

AU - Su, Y. K.

AU - Tu, R. C.

AU - Lan, W. H.

AU - Chang, H.

PY - 1999/7/22

Y1 - 1999/7/22

N2 - The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

AB - The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

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DO - 10.1049/el:19990835

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JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Ohmic contact to p-ZnSe and p-ZnMgSSe

Abstract

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