The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.
|Number of pages||2|
|Publication status||Published - 1999 Jul 22|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering