Ohmic contact to p-ZnSe and p-ZnMgSSe

Shoou-Jinn Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan, H. Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

Original languageEnglish
Pages (from-to)1280-1281
Number of pages2
JournalElectronics Letters
Volume35
Issue number15
DOIs
Publication statusPublished - 1999 Jul 22

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Ohmic contacts
Contact resistance
Epitaxial layers
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chang, S-J., Chen, W. R., Su, Y. K., Tu, R. C., Lan, W. H., & Chang, H. (1999). Ohmic contact to p-ZnSe and p-ZnMgSSe. Electronics Letters, 35(15), 1280-1281. https://doi.org/10.1049/el:19990835
Chang, Shoou-Jinn ; Chen, W. R. ; Su, Y. K. ; Tu, R. C. ; Lan, W. H. ; Chang, H. / Ohmic contact to p-ZnSe and p-ZnMgSSe. In: Electronics Letters. 1999 ; Vol. 35, No. 15. pp. 1280-1281.
@article{3e8c05b3616044c4adec1190625a9584,
title = "Ohmic contact to p-ZnSe and p-ZnMgSSe",
abstract = "The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.",
author = "Shoou-Jinn Chang and Chen, {W. R.} and Su, {Y. K.} and Tu, {R. C.} and Lan, {W. H.} and H. Chang",
year = "1999",
month = "7",
day = "22",
doi = "10.1049/el:19990835",
language = "English",
volume = "35",
pages = "1280--1281",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "15",

}

Chang, S-J, Chen, WR, Su, YK, Tu, RC, Lan, WH & Chang, H 1999, 'Ohmic contact to p-ZnSe and p-ZnMgSSe', Electronics Letters, vol. 35, no. 15, pp. 1280-1281. https://doi.org/10.1049/el:19990835

Ohmic contact to p-ZnSe and p-ZnMgSSe. / Chang, Shoou-Jinn; Chen, W. R.; Su, Y. K.; Tu, R. C.; Lan, W. H.; Chang, H.

In: Electronics Letters, Vol. 35, No. 15, 22.07.1999, p. 1280-1281.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ohmic contact to p-ZnSe and p-ZnMgSSe

AU - Chang, Shoou-Jinn

AU - Chen, W. R.

AU - Su, Y. K.

AU - Tu, R. C.

AU - Lan, W. H.

AU - Chang, H.

PY - 1999/7/22

Y1 - 1999/7/22

N2 - The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

AB - The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 × 10-1Ωcm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 × 10-5 Ωcm2 and 3.8 × 10-5 Ωcm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

UR - http://www.scopus.com/inward/record.url?scp=0032649557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032649557&partnerID=8YFLogxK

U2 - 10.1049/el:19990835

DO - 10.1049/el:19990835

M3 - Article

AN - SCOPUS:0032649557

VL - 35

SP - 1280

EP - 1281

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 15

ER -

Chang S-J, Chen WR, Su YK, Tu RC, Lan WH, Chang H. Ohmic contact to p-ZnSe and p-ZnMgSSe. Electronics Letters. 1999 Jul 22;35(15):1280-1281. https://doi.org/10.1049/el:19990835