Abstract
Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 986-988 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2002 Feb 11 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
}
Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers. / Gessmann, T.; Li, Y. L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, Jinn-Kong.
In: Applied Physics Letters, Vol. 80, No. 6, 11.02.2002, p. 986-988.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers
AU - Gessmann, T.
AU - Li, Y. L.
AU - Waldron, E. L.
AU - Graff, J. W.
AU - Schubert, E. F.
AU - Sheu, Jinn-Kong
PY - 2002/2/11
Y1 - 2002/2/11
N2 - Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.
AB - Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=79955990242&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955990242&partnerID=8YFLogxK
U2 - 10.1063/1.1445807
DO - 10.1063/1.1445807
M3 - Article
VL - 80
SP - 986
EP - 988
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -