Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers

T. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, Jinn-Kong Sheu

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.

Original languageEnglish
Pages (from-to)986-988
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number6
DOIs
Publication statusPublished - 2002 Feb 11

Fingerprint

electric contacts
contact resistance
polarization
low resistance
transmission lines
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Gessmann, T. ; Li, Y. L. ; Waldron, E. L. ; Graff, J. W. ; Schubert, E. F. ; Sheu, Jinn-Kong. / Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers. In: Applied Physics Letters. 2002 ; Vol. 80, No. 6. pp. 986-988.
@article{3545949dd8e141359431007c3b6a8187,
title = "Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers",
abstract = "Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.",
author = "T. Gessmann and Li, {Y. L.} and Waldron, {E. L.} and Graff, {J. W.} and Schubert, {E. F.} and Jinn-Kong Sheu",
year = "2002",
month = "2",
day = "11",
doi = "10.1063/1.1445807",
language = "English",
volume = "80",
pages = "986--988",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers. / Gessmann, T.; Li, Y. L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, Jinn-Kong.

In: Applied Physics Letters, Vol. 80, No. 6, 11.02.2002, p. 986-988.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers

AU - Gessmann, T.

AU - Li, Y. L.

AU - Waldron, E. L.

AU - Graff, J. W.

AU - Schubert, E. F.

AU - Sheu, Jinn-Kong

PY - 2002/2/11

Y1 - 2002/2/11

N2 - Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.

AB - Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10-2cm2 and 6×10-3cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=79955990242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955990242&partnerID=8YFLogxK

U2 - 10.1063/1.1445807

DO - 10.1063/1.1445807

M3 - Article

VL - 80

SP - 986

EP - 988

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -