Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers

Yen Tang Lyu, Kuo Liang Jaw, Ching Ting Lee, Chang Da Tsai, Yow Jon Lin, Ya Tung Cherng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0×10-6 and 3.0×10-6 Ω cm2 for Ti/Pt/Au and Ti/Ni/Au metallization systems, respectively. However, the thermal stability can be achieved at least up to 350 °C for Ti/Pt/Au metallization system, while the Ti/Ni/Au metallization can only thermally stabilize at 250 °C. The degradation of the specific contact resistance at high annealing temperature is attributed to the induced decomposition of InAs and graded InGaAs layers. Rutherford backscattering spectroscopy spectra and Auger electron spectroscopy depth profile were used to study the physical mechanism.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalMaterials Chemistry and Physics
Volume63
Issue number2
DOIs
Publication statusPublished - 2000 Feb 28

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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