Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

Bang Tai Tang; Qing Xuan Yu; Hsin Ying Lee; Ching Ting Lee

doi:10.1016/S0921-5107(00)00760-1

Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

Bang Tai Tang, Qing Xuan Yu, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10^-4 Ω cm² were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

Original language	English
Pages (from-to)	259-261
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00760-1
Publication status	Published - 2001 May 22

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S0921-5107(00)00760-1

Cite this

@article{a3bcf02e8936451da3363faf658d2ade,

title = "Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer",

abstract = "The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.",

author = "Tang, {Bang Tai} and Yu, {Qing Xuan} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under NSC89-2215-E008-030",

year = "2001",

month = may,

day = "22",

doi = "10.1016/S0921-5107(00)00760-1",

language = "English",

volume = "82",

pages = "259--261",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

AU - Tang, Bang Tai

AU - Yu, Qing Xuan

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under NSC89-2215-E008-030

PY - 2001/5/22

Y1 - 2001/5/22

N2 - The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

AB - The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=0035933014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035933014&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00760-1

DO - 10.1016/S0921-5107(00)00760-1

M3 - Article

AN - SCOPUS:0035933014

SN - 0921-5107

VL - 82

SP - 259

EP - 261

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this