| Original language | English |
|---|---|
| Pages (from-to) | 152-154 |
| Number of pages | 3 |
| Journal | ECS Transactions |
| Volume | 1 |
| Issue number | 2 |
| Publication status | Published - 2005 Dec 1 |
| Event | 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 21 |
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Composite films
Thin films
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Yang, J. L., & Chen, J-S. (2005). Ohmicity of Au-NiO composite thin film contacting to p-type GaN. ECS Transactions, 1(2), 152-154.
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title = "Ohmicity of Au-NiO composite thin film contacting to p-type GaN",
author = "Yang, {Jiin Long} and Jen-Sue Chen",
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Yang, JL & Chen, J-S 2005, 'Ohmicity of Au-NiO composite thin film contacting to p-type GaN', ECS Transactions, vol. 1, no. 2, pp. 152-154.
Ohmicity of Au-NiO composite thin film contacting to p-type GaN. / Yang, Jiin Long; Chen, Jen-Sue.
In: ECS Transactions, Vol. 1, No. 2, 01.12.2005, p. 152-154.Research output: Contribution to journal › Conference article
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AU - Chen, Jen-Sue
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Yang JL, Chen J-S. Ohmicity of Au-NiO composite thin film contacting to p-type GaN. ECS Transactions. 2005 Dec 1;1(2):152-154.