On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Chun Chia Chen, Huey Ing Chen, Hao Yeh Liu, Po Cheng Chou, Jian Kai Liou, Wen Chau Liu

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A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.

Original languageEnglish
Pages (from-to)658-663
Number of pages6
JournalSensors and Actuators, B: Chemical
Publication statusPublished - 2015 Mar 31


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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