On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Chun Chia Chen, Huey-Ing Chen, Hao Yeh Liu, Po Cheng Chou, Jian Kai Liou, Wen-Chau Liu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H 2 O 2 ) treatment is fabricated and studied. A 3-nm-thick Ga x O y layer formed by an immersion in H 2 O 2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na + and K + ions were observed. Thus, the studied GaN-based ISFET utilizing an H 2 O 2 treatment promises to fabricate high-performance pH sensing applications.

Original languageEnglish
Pages (from-to)658-663
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume209
DOIs
Publication statusPublished - 2015 Mar 31

Fingerprint

Ion sensitive field effect transistors
surface treatment
hydrogen peroxide
Hydrogen peroxide
Hydrogen Peroxide
Surface treatment
field effect transistors
ions
Electric potential
Hysteresis
Energy dispersive spectroscopy
drift rate
X ray photoelectron spectroscopy
Ions
Hydrogen
low voltage
submerging
decay rates
high current
high voltages

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment",
abstract = "A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H 2 O 2 ) treatment is fabricated and studied. A 3-nm-thick Ga x O y layer formed by an immersion in H 2 O 2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na + and K + ions were observed. Thus, the studied GaN-based ISFET utilizing an H 2 O 2 treatment promises to fabricate high-performance pH sensing applications.",
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On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment. / Chen, Chun Chia; Chen, Huey-Ing; Liu, Hao Yeh; Chou, Po Cheng; Liou, Jian Kai; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 209, 31.03.2015, p. 658-663.

Research output: Contribution to journalArticle

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AU - Chen, Chun Chia

AU - Chen, Huey-Ing

AU - Liu, Hao Yeh

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Liu, Wen-Chau

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AB - A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H 2 O 2 ) treatment is fabricated and studied. A 3-nm-thick Ga x O y layer formed by an immersion in H 2 O 2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na + and K + ions were observed. Thus, the studied GaN-based ISFET utilizing an H 2 O 2 treatment promises to fabricate high-performance pH sensing applications.

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