On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure

Yi Jung Liu; Chih Hung Yen; Li Ynag Chen; Tsung Han Tsai; Tsung Yuan Tsai; Wen Chau Liu

doi:10.1109/LED.2009.2030140

On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure

Yi Jung Liu, Chih Hung Yen, Li Ynag Chen, Tsung Han Tsai, Tsung Yuan Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

An interesting GaN-based light-emitting diode (LED) with a ten-period i-InGaN/p-GaN (5-nm/5-nm) superlattice (SL) structure, inserted between a multiple-quantum-well structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current-spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carrier injection. A substantially reduced leakage current (10^-7 -10^-9A) and higher endurance of the reverse current pulse are found. As compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power and the increment of 5% in external quantum efficiency are observed.

Original language	English
Pages (from-to)	1149-1151
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2030140
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2030140

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title = "On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure",

abstract = "An interesting GaN-based light-emitting diode (LED) with a ten-period i-InGaN/p-GaN (5-nm/5-nm) superlattice (SL) structure, inserted between a multiple-quantum-well structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current-spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carrier injection. A substantially reduced leakage current (10-7 -10-9A) and higher endurance of the reverse current pulse are found. As compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power and the increment of 5% in external quantum efficiency are observed.",

author = "Liu, {Yi Jung} and Yen, {Chih Hung} and Chen, {Li Ynag} and Tsai, {Tsung Han} and Tsai, {Tsung Yuan} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received July 1, 2009; revised August 1, 2009. First published October 6, 2009; current version published October 23, 2009. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-238-MY3. The review of this letter was arranged by Editor P. K.-L. Yu.",

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doi = "10.1109/LED.2009.2030140",

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AU - Yen, Chih Hung

AU - Chen, Li Ynag

AU - Tsai, Tsung Han

AU - Tsai, Tsung Yuan

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received July 1, 2009; revised August 1, 2009. First published October 6, 2009; current version published October 23, 2009. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-238-MY3. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2009

Y1 - 2009

N2 - An interesting GaN-based light-emitting diode (LED) with a ten-period i-InGaN/p-GaN (5-nm/5-nm) superlattice (SL) structure, inserted between a multiple-quantum-well structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current-spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carrier injection. A substantially reduced leakage current (10-7 -10-9A) and higher endurance of the reverse current pulse are found. As compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power and the increment of 5% in external quantum efficiency are observed.

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On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure

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