Keyphrases
GaN-based Light-emitting Diodes
100%
Indium Gallium Nitride (InGaN)
100%
P-GaN
100%
Superlattice Structure
100%
Light-emitting Diodes
50%
Carrier Injection
25%
GaN Layers
25%
Turn-on Voltage
25%
Superlattice
25%
Power Output
25%
Leakage Current
25%
Current Pulse
25%
Reverse Current
25%
External Quantum Efficiency
25%
Contact Resistance
25%
Confining Layer
25%
Multiple Quantum Well Structure
25%
Light-emitting Diode Device
25%
Current Spreading
25%
Hole Injection Efficiency
25%
High Endurance
25%
Spreading Performance
25%
Engineering
Light-Emitting Diode
100%
Superlattice Structure
100%
Quantum Well
20%
Superlattice
20%
Output Power
20%
External Quantum Efficiency
20%
Injection Efficiency
20%
Current Pulse
20%
Material Science
Light-Emitting Diode
100%
Superlattice
100%
Quantum Well
20%
Contact Resistance
20%