On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

Jian Kai Liou; Yi Jung Liu; Chiun Chia Chen; Po Cheng Chou; Wei Chou Hsu; Wen Chau Liu

doi:10.1109/LED.2011.2177806

On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

Jian Kai Liou, Yi Jung Liu, Chiun Chia Chen, Po Cheng Chou, Wei Chou Hsu, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

Original language	English
Article number	6125975
Pages (from-to)	227-229
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/LED.2011.2177806
Publication status	Published - 2012 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2177806

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title = "On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface",

abstract = "An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.",

author = "Liou, {Jian Kai} and Liu, {Yi Jung} and Chen, {Chiun Chia} and Chou, {Po Cheng} and Hsu, {Wei Chou} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received November 7, 2011; revised November 19, 2011; accepted November 21, 2011. Date of publication January 9, 2012; date of current version January 27, 2012. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-100-2221-E-006-044-MY3. The review of this letter was arranged by Editor O. Manasreh.",

year = "2012",

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doi = "10.1109/LED.2011.2177806",

language = "English",

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AU - Liou, Jian Kai

AU - Liu, Yi Jung

AU - Chen, Chiun Chia

AU - Chou, Po Cheng

AU - Hsu, Wei Chou

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received November 7, 2011; revised November 19, 2011; accepted November 21, 2011. Date of publication January 9, 2012; date of current version January 27, 2012. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-100-2221-E-006-044-MY3. The review of this letter was arranged by Editor O. Manasreh.

PY - 2012/2

Y1 - 2012/2

N2 - An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

AB - An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

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On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

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