On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure

Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Tsung Yuan Tsai, Wen Chau Liu

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Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

Original languageEnglish
Article number5762591
Pages (from-to)1037-1039
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number15
DOIs
Publication statusPublished - 2011 Jul 14

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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