On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure

Yi Jung Liu; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Tsung Yuan Tsai; Wen Chau Liu

doi:10.1109/LPT.2011.2150210

On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure

Yi Jung Liu
, Chien Chang Huang
, Tai You Chen
, Chi Shiang Hsu
, Tsung Yuan Tsai
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

Original language	English
Article number	5762591
Pages (from-to)	1037-1039
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2011.2150210
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2150210

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title = "On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure",

abstract = "A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0\% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.",

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AU - Liu, Yi Jung

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Tsai, Tsung Yuan

AU - Liu, Wen Chau

PY - 2011

Y1 - 2011

N2 - A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

AB - A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

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On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure

Abstract

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