On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

Chi Shiang Hsu; Kun Wei Lin; Huey Ing Chen; Tai You Chen; Chien Cheng Huang; Po Cheng Chou; Rong Chau Liu; Wen Chau Liu

doi:10.1016/j.ijhydene.2011.09.031

On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

Chi Shiang Hsu, Kun Wei Lin, Huey Ing Chen, Tai You Chen, Chien Cheng Huang, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H₂/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.

Original language	English
Pages (from-to)	15906-15912
Number of pages	7
Journal	International Journal of Hydrogen Energy
Volume	36
Issue number	24
DOIs	https://doi.org/10.1016/j.ijhydene.2011.09.031
Publication status	Published - 2011 Dec

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ijhydene.2011.09.031

Cite this

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title = "On a heterostructure field-effect transistor (HFET) based hydrogen sensing system",

abstract = "An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.",

author = "Hsu, {Chi Shiang} and Lin, {Kun Wei} and Chen, {Huey Ing} and Chen, {Tai You} and Huang, {Chien Cheng} and Chou, {Po Cheng} and Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: This work was supported in part by the National Science Council of the Republic of China under contact no. NSC-97-2221-E-006-237-MY3 .",

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language = "English",

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pages = "15906--15912",

journal = "International Journal of Hydrogen Energy",

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AU - Hsu, Chi Shiang

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Chen, Tai You

AU - Huang, Chien Cheng

AU - Chou, Po Cheng

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: This work was supported in part by the National Science Council of the Republic of China under contact no. NSC-97-2221-E-006-237-MY3 .

PY - 2011/12

Y1 - 2011/12

N2 - An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.

AB - An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.

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M3 - Article

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JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

IS - 24

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On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

Abstract

All Science Journal Classification (ASJC) codes

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