On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

Chi Shiang Hsu, Kun Wei Lin, Huey Ing Chen, Tai You Chen, Chien Cheng Huang, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.

Original languageEnglish
Pages (from-to)15906-15912
Number of pages7
JournalInternational Journal of Hydrogen Energy
Volume36
Issue number24
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

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  • Cite this

    Hsu, C. S., Lin, K. W., Chen, H. I., Chen, T. Y., Huang, C. C., Chou, P. C., Liu, R. C., & Liu, W. C. (2011). On a heterostructure field-effect transistor (HFET) based hydrogen sensing system. International Journal of Hydrogen Energy, 36(24), 15906-15912. https://doi.org/10.1016/j.ijhydene.2011.09.031