On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Tsung Han Tsai, Huey-Ing Chen, Kun Wei Lin, Yaw Wen Kuo, Po Shun Chiu, Chung Fu Chang, Li Yang Chen, Tzu Pin Chen, Yi Jung Liu, Wen-Chau Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (ΔVth) of 260 mV is observed upon exposing to a 1% H2/air gas. The drain current sensing response (SR) shows the strong dependence on the gate bias voltage VGS. A maximum SR of 107% is found at the applied voltage of VGS = -0.5 V. In addition, the temperature behavior of SR is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy Ea of 2.88 kJ mol-1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen.

Original languageEnglish
Pages (from-to)310-316
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume139
Issue number2
DOIs
Publication statusPublished - 2009 Jun 4

Fingerprint

High electron mobility transistors
high electron mobility transistors
Hydrogen
sensors
Sensors
hydrogen
Adsorption
adsorption
Exothermic reactions
exothermic reactions
Drain current
electric potential
rectification
Bias voltage
Threshold voltage
threshold voltage
Activation energy
Gases
activation energy
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tsai, Tsung Han ; Chen, Huey-Ing ; Lin, Kun Wei ; Kuo, Yaw Wen ; Chiu, Po Shun ; Chang, Chung Fu ; Chen, Li Yang ; Chen, Tzu Pin ; Liu, Yi Jung ; Liu, Wen-Chau. / On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor. In: Sensors and Actuators, B: Chemical. 2009 ; Vol. 139, No. 2. pp. 310-316.
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On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor. / Tsai, Tsung Han; Chen, Huey-Ing; Lin, Kun Wei; Kuo, Yaw Wen; Chiu, Po Shun; Chang, Chung Fu; Chen, Li Yang; Chen, Tzu Pin; Liu, Yi Jung; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 139, No. 2, 04.06.2009, p. 310-316.

Research output: Contribution to journalArticle

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AU - Chen, Huey-Ing

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AU - Chiu, Po Shun

AU - Chang, Chung Fu

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AU - Liu, Wen-Chau

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