On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Tsung Han Tsai; Huey Ing Chen; Kun Wei Lin; Yaw Wen Kuo; Po Shun Chiu; Chung Fu Chang; Li Yang Chen; Tzu Pin Chen; Yi Jung Liu; Wen Chau Liu

doi:10.1016/j.snb.2009.03.042

On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Yaw Wen Kuo, Po Shun Chiu, Chung Fu Chang, Li Yang Chen, Tzu Pin Chen, Yi Jung Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (ΔV_th) of 260 mV is observed upon exposing to a 1% H₂/air gas. The drain current sensing response (S_R) shows the strong dependence on the gate bias voltage V_GS. A maximum S_R of 107% is found at the applied voltage of V_GS = -0.5 V. In addition, the temperature behavior of S_R is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy E_a of 2.88 kJ mol^-1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen.

Original language	English
Pages (from-to)	310-316
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	139
Issue number	2
DOIs	https://doi.org/10.1016/j.snb.2009.03.042
Publication status	Published - 2009 Jun 4

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2009.03.042

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title = "On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor",

abstract = "The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (ΔVth) of 260 mV is observed upon exposing to a 1% H2/air gas. The drain current sensing response (SR) shows the strong dependence on the gate bias voltage VGS. A maximum SR of 107% is found at the applied voltage of VGS = -0.5 V. In addition, the temperature behavior of SR is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy Ea of 2.88 kJ mol-1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Lin, {Kun Wei} and Kuo, {Yaw Wen} and Chiu, {Po Shun} and Chang, {Chung Fu} and Chen, {Li Yang} and Chen, {Tzu Pin} and Liu, {Yi Jung} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-237-MY3. ",

year = "2009",

month = jun,

day = "4",

doi = "10.1016/j.snb.2009.03.042",

language = "English",

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T1 - On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Kuo, Yaw Wen

AU - Chiu, Po Shun

AU - Chang, Chung Fu

AU - Chen, Li Yang

AU - Chen, Tzu Pin

AU - Liu, Yi Jung

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-237-MY3.

PY - 2009/6/4

Y1 - 2009/6/4

N2 - The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (ΔVth) of 260 mV is observed upon exposing to a 1% H2/air gas. The drain current sensing response (SR) shows the strong dependence on the gate bias voltage VGS. A maximum SR of 107% is found at the applied voltage of VGS = -0.5 V. In addition, the temperature behavior of SR is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy Ea of 2.88 kJ mol-1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen.

AB - The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (ΔVth) of 260 mV is observed upon exposing to a 1% H2/air gas. The drain current sensing response (SR) shows the strong dependence on the gate bias voltage VGS. A maximum SR of 107% is found at the applied voltage of VGS = -0.5 V. In addition, the temperature behavior of SR is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy Ea of 2.88 kJ mol-1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen.

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JF - Sensors and Actuators, B: Chemical

IS - 2

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On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

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