On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures

Po Cheng Chou, Huey-Ing Chen, I-Ping Liu, Wei Cheng Chen, Chun Chia Chen, Jian Kai Liou, Cheng Jing Lai, Wen-Chau Liu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.

Original languageEnglish
Article number15920
Pages (from-to)9006-9012
Number of pages7
JournalInternational Journal of Hydrogen Energy
Volume40
Issue number29
DOIs
Publication statusPublished - 2015 Aug 3

Fingerprint

Schottky diodes
pyramids
Nanostructures
Diodes
Hydrogen
sensors
Sensors
hydrogen
air
transient response
Bias currents
Air
aspect ratio
Transient analysis
surface roughness
Aspect ratio
Surface roughness
fabrication
adsorption
causes

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

Cite this

Chou, Po Cheng ; Chen, Huey-Ing ; Liu, I-Ping ; Chen, Wei Cheng ; Chen, Chun Chia ; Liou, Jian Kai ; Lai, Cheng Jing ; Liu, Wen-Chau. / On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures. In: International Journal of Hydrogen Energy. 2015 ; Vol. 40, No. 29. pp. 9006-9012.
@article{1951cfe2f15b45b8b84f57298413fd72,
title = "On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures",
abstract = "Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1{\%} H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.",
author = "Chou, {Po Cheng} and Huey-Ing Chen and I-Ping Liu and Chen, {Wei Cheng} and Chen, {Chun Chia} and Liou, {Jian Kai} and Lai, {Cheng Jing} and Wen-Chau Liu",
year = "2015",
month = "8",
day = "3",
doi = "10.1016/j.ijhydene.2015.05.036",
language = "English",
volume = "40",
pages = "9006--9012",
journal = "International Journal of Hydrogen Energy",
issn = "0360-3199",
publisher = "Elsevier Limited",
number = "29",

}

On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures. / Chou, Po Cheng; Chen, Huey-Ing; Liu, I-Ping; Chen, Wei Cheng; Chen, Chun Chia; Liou, Jian Kai; Lai, Cheng Jing; Liu, Wen-Chau.

In: International Journal of Hydrogen Energy, Vol. 40, No. 29, 15920, 03.08.2015, p. 9006-9012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures

AU - Chou, Po Cheng

AU - Chen, Huey-Ing

AU - Liu, I-Ping

AU - Chen, Wei Cheng

AU - Chen, Chun Chia

AU - Liou, Jian Kai

AU - Lai, Cheng Jing

AU - Liu, Wen-Chau

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.

AB - Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=84937736854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937736854&partnerID=8YFLogxK

U2 - 10.1016/j.ijhydene.2015.05.036

DO - 10.1016/j.ijhydene.2015.05.036

M3 - Article

VL - 40

SP - 9006

EP - 9012

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

SN - 0360-3199

IS - 29

M1 - 15920

ER -