Abstract
Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.
| Original language | English |
|---|---|
| Article number | 15920 |
| Pages (from-to) | 9006-9012 |
| Number of pages | 7 |
| Journal | International Journal of Hydrogen Energy |
| Volume | 40 |
| Issue number | 29 |
| DOIs | |
| Publication status | Published - 2015 Aug 3 |
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All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Condensed Matter Physics
- Energy Engineering and Power Technology
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On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures. / Chou, Po Cheng; Chen, Huey-Ing; Liu, I-Ping; Chen, Wei Cheng; Chen, Chun Chia; Liou, Jian Kai; Lai, Cheng Jing; Liu, Wen-Chau.
In: International Journal of Hydrogen Energy, Vol. 40, No. 29, 15920, 03.08.2015, p. 9006-9012.Research output: Contribution to journal › Article
TY - JOUR
T1 - On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures
AU - Chou, Po Cheng
AU - Chen, Huey-Ing
AU - Liu, I-Ping
AU - Chen, Wei Cheng
AU - Chen, Chun Chia
AU - Liou, Jian Kai
AU - Lai, Cheng Jing
AU - Liu, Wen-Chau
PY - 2015/8/3
Y1 - 2015/8/3
N2 - Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.
AB - Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volume aspect ratio which give the remarkable increase of adsorption sites on the surface for hydrogen molecules. Experimentally, the studied device with pyramid-like Pd nanostructures demonstrates enhanced hydrogen sensing performance, including a large forward-bias current variation of 1.95 × 10 -6 A and a high sensing response of 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those of the conventional planar-surface device. In addition, an improved hydrogen detection limit of 10 ppb H 2 /air at 300 K is found for the studied device with pyramid-like Pd nanostructures. The related hydrogen sensing characteristics including transient responses and steady-state analysis are also studied in this work. Therefore, based on the improved sensing properties and advantages of low-cost, easy fabrication, and solid stability of operation, the studied device shows the promise for high-performance hydrogen sensing applications.
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U2 - 10.1016/j.ijhydene.2015.05.036
DO - 10.1016/j.ijhydene.2015.05.036
M3 - Article
VL - 40
SP - 9006
EP - 9012
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
SN - 0360-3199
IS - 29
M1 - 15920
ER -