On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure

Chih Hung Yen; Yi Jung Liu; Kuo Hui Yu; Pei Ling Lin; Tzu Pin Chen; Li Yang Chen; Tsung Han Tsai; Nan Yi Huang; Chong Yi Lee; Wen Chau Liu

doi:10.1109/LED.2009.2014789

On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure

Chih Hung Yen, Yi Jung Liu, Kuo Hui Yu, Pei Ling Lin, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Nan Yi Huang, Chong Yi Lee, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

Original language	English
Pages (from-to)	359-361
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014789
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2014789

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title = "On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure",

abstract = "An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.",

author = "Yen, {Chih Hung} and Liu, {Yi Jung} and Yu, {Kuo Hui} and Lin, {Pei Ling} and Chen, {Tzu Pin} and Chen, {Li Yang} and Tsai, {Tsung Han} and Huang, {Nan Yi} and Lee, {Chong Yi} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received January 16, 2009; revised January 28, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of Taiwan under Contract NSC 95-2221-E-006-434-MY2 and in part by Chi Mei Lighting Technology Company. The review of this letter was arranged by Editor C. Jagadish.",

year = "2009",

doi = "10.1109/LED.2009.2014789",

language = "English",

volume = "30",

pages = "359--361",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure

AU - Yen, Chih Hung

AU - Liu, Yi Jung

AU - Yu, Kuo Hui

AU - Lin, Pei Ling

AU - Chen, Tzu Pin

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Huang, Nan Yi

AU - Lee, Chong Yi

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received January 16, 2009; revised January 28, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of Taiwan under Contract NSC 95-2221-E-006-434-MY2 and in part by Chi Mei Lighting Technology Company. The review of this letter was arranged by Editor C. Jagadish.

PY - 2009

Y1 - 2009

N2 - An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

AB - An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

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On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure

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