On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure

Chih Hung Yen, Yi Jung Liu, Kuo Hui Yu, Pei Ling Lin, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Nan Yi Huang, Chong Yi Lee, Wen-Chau Liu

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number4
DOIs
Publication statusPublished - 2009 Mar 10

Fingerprint

Ohmic contacts
Tin oxides
Indium
Light emitting diodes
Quantum efficiency
Semiconductor quantum wells
Oxide films
Chemical activation
indium tin oxide
Atoms
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yen, Chih Hung ; Liu, Yi Jung ; Yu, Kuo Hui ; Lin, Pei Ling ; Chen, Tzu Pin ; Chen, Li Yang ; Tsai, Tsung Han ; Huang, Nan Yi ; Lee, Chong Yi ; Liu, Wen-Chau. / On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 4. pp. 359-361.
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abstract = "An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7{\%} and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26{\%} under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.",
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Yen, CH, Liu, YJ, Yu, KH, Lin, PL, Chen, TP, Chen, LY, Tsai, TH, Huang, NY, Lee, CY & Liu, W-C 2009, 'On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure', IEEE Electron Device Letters, vol. 30, no. 4, pp. 359-361. https://doi.org/10.1109/LED.2009.2014789

On an AlGaInP-based light-emitting diode with an ITO direct ohmic contact structure. / Yen, Chih Hung; Liu, Yi Jung; Yu, Kuo Hui; Lin, Pei Ling; Chen, Tzu Pin; Chen, Li Yang; Tsai, Tsung Han; Huang, Nan Yi; Lee, Chong Yi; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 30, No. 4, 10.03.2009, p. 359-361.

Research output: Contribution to journalArticle

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AU - Yen, Chih Hung

AU - Liu, Yi Jung

AU - Yu, Kuo Hui

AU - Lin, Pei Ling

AU - Chen, Tzu Pin

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Huang, Nan Yi

AU - Lee, Chong Yi

AU - Liu, Wen-Chau

PY - 2009/3/10

Y1 - 2009/3/10

N2 - An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

AB - An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. Experimental results demonstrate that a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, under an injection current of 20 mA, are obtained. In addition, the studied LED exhibits a higher external quantum efficiency of 9.7% and a larger maximum light-output power of 26.6 mW. The external quantum efficiency is increased by 26% under the injection current of 100 mA, as compared with the conventional LED without this structure. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior of the studied LED, under a 20-mA operation condition, is comparable to the conventional LED without this structure.

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