On an ammonia gas sensor based on a Pt/AlGaN heterostructure field-effect transistor

Tai You Chen, Huey Ing Chen, Chi Shiang Hsu, Chien Chang Huang, Chung Fu Chang, Po Cheng Chou, Wen Chau Liu

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29 Citations (Scopus)

Abstract

A new and interesting Pt/AlGaN heterostructure field-effect transistor (HFET)-based ammonia gas sensor is fabricated and investigated. The related ammonia-sensing mechanisms, including direct dissociation of ammonia gas and triple-point model, are presented. Experimentally, the maximum transconductance variation Δ g m and threshold voltage variation Δ V th are 16.63 mS/mm and 318.1 mV, respectively, upon exposing to a 10000-ppm NH 3air gas. In addition, the maximum sensing response and rectification ratio of 113.4 and 2.1 ×10 3, respectively, are obtained when 10000-and 35-ppm NH 3air gases are introduced. Therefore, the studied Pt/AlGaN HFET shows the promise for ammonia-gas-sensing applications.

Original languageEnglish
Article number6158572
Pages (from-to)612-614
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 2012 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, T. Y., Chen, H. I., Hsu, C. S., Huang, C. C., Chang, C. F., Chou, P. C., & Liu, W. C. (2012). On an ammonia gas sensor based on a Pt/AlGaN heterostructure field-effect transistor. IEEE Electron Device Letters, 33(4), 612-614. [6158572]. https://doi.org/10.1109/LED.2012.2184832