On an Electroless Plating (EP)-Based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor

Chien Chang Huang, Huey-Ing Chen, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Po Cheng Chou, Jian Kai Liou, Wen-Chau Liu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-μm-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1% and 5 ppm H 2 /air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications.

Original languageEnglish
Article number6183459
Pages (from-to)788-790
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number6
DOIs
Publication statusPublished - 2012 Apr 18

Fingerprint

Electroless plating
High electron mobility transistors
Chemical sensors
Hydrogen
Drain current
Chemical activation
Cutoff frequency
Leakage currents
Seed
Thermodynamic stability
Gases
Microwaves
aluminum gallium nitride
Electric potential
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Huang, Chien Chang ; Chen, Huey-Ing ; Chen, Tai You ; Hsu, Chi Shiang ; Chen, Chun Chia ; Chou, Po Cheng ; Liou, Jian Kai ; Liu, Wen-Chau. / On an Electroless Plating (EP)-Based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 6. pp. 788-790.
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abstract = "A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-μm-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1{\%} and 5 ppm H 2 /air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications.",
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On an Electroless Plating (EP)-Based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor. / Huang, Chien Chang; Chen, Huey-Ing; Chen, Tai You; Hsu, Chi Shiang; Chen, Chun Chia; Chou, Po Cheng; Liou, Jian Kai; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 33, No. 6, 6183459, 18.04.2012, p. 788-790.

Research output: Contribution to journalArticle

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AU - Huang, Chien Chang

AU - Chen, Huey-Ing

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Chen, Chun Chia

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Liu, Wen-Chau

PY - 2012/4/18

Y1 - 2012/4/18

N2 - A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-μm-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1% and 5 ppm H 2 /air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications.

AB - A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-μm-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1% and 5 ppm H 2 /air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications.

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