On an electroless-plating (EP) gate metamorphic transistor

Chien Chang Huang, Huey-Ing Chen, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Hsuan Sheng Chang, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review


The temperature-dependent characteristics of an InAlAs/InGaAs metamorphic high electron mobility transistor with an electroless plating (EP) Pd-gate metal are studied and demonstrated. Under the low-temperature and low-energy chemical deposition conditions, the EP deposition approach could reduce the thermal damage and disordered states to form an oxide-free metal-semiconductor interface. Therefore, good experimental results including the improved characteristics of forward voltage, reverse leakage current, Schottky barrier height, ideality factor, transconductance, and drain saturation current are found for a 1 μm gate-length device. Moreover, the benefits of simplified process and low-cost show the promise of the proposed EP approach for III-V electronic applications.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number2
Publication statusPublished - 2012 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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