On an indium-tin-oxide thin film based ammonia gas sensor

Cheng Wei Lin; Huey Ing Chen; Tai You Chen; Chien Chang Huang; Chi Shiang Hsu; Rong Chau Liu; Wen Chau Liu

doi:10.1016/j.snb.2011.07.041

On an indium-tin-oxide thin film based ammonia gas sensor

Cheng Wei Lin, Huey Ing Chen, Tai You Chen, Chien Chang Huang, Chi Shiang Hsu, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH₃ sensing performances including high response of 2312%, fast response and recovery times of 73 and 104 s upon the introduction of a 1000 ppm NH₃/air gas at 150 °C are observed. In comparison, the proposed sensor is superior to other previously reported ITO thin film based ammonia sensors. Due to the advantages of simple structure, easy operation, low cost, and excellent performances, the studied device gives a promising use in high-performance ammonia sensor applications.

Original language	English
Pages (from-to)	1481-1484
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	160
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2011.07.041
Publication status	Published - 2011 Dec 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "On an indium-tin-oxide thin film based ammonia gas sensor",

abstract = "An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH3 sensing performances including high response of 2312%, fast response and recovery times of 73 and 104 s upon the introduction of a 1000 ppm NH3/air gas at 150 °C are observed. In comparison, the proposed sensor is superior to other previously reported ITO thin film based ammonia sensors. Due to the advantages of simple structure, easy operation, low cost, and excellent performances, the studied device gives a promising use in high-performance ammonia sensor applications.",

author = "Lin, {Cheng Wei} and Chen, {Huey Ing} and Chen, {Tai You} and Huang, {Chien Chang} and Hsu, {Chi Shiang} and Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-97-2221-E-006-237-MY3 . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Lin, Cheng Wei

AU - Chen, Huey Ing

AU - Chen, Tai You

AU - Huang, Chien Chang

AU - Hsu, Chi Shiang

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-97-2221-E-006-237-MY3 . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/12/15

Y1 - 2011/12/15

N2 - An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH3 sensing performances including high response of 2312%, fast response and recovery times of 73 and 104 s upon the introduction of a 1000 ppm NH3/air gas at 150 °C are observed. In comparison, the proposed sensor is superior to other previously reported ITO thin film based ammonia sensors. Due to the advantages of simple structure, easy operation, low cost, and excellent performances, the studied device gives a promising use in high-performance ammonia sensor applications.

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On an indium-tin-oxide thin film based ammonia gas sensor

Abstract

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