On an integrated gas sensing system based on an AlGaN/GaN heterostructure compound semiconductor

Chi Shiang Hsu, Kun Wei Lin, Wen-Chau Liu

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1 Citation (Scopus)

Abstract

An interesting integrated gas sensing system, based on an AlGaN/GaN heterostructure compound semiconductor is developed and investigated. This gas detecting system consists of triple gas sensors and a gas sensing readout circuitry. Good gas sensing responses with remarkable current variations of 5.56 mA (@1000 ppm H2/air), 19.06 μA (@1000 ppm NH3/air), and 0.82 mA (@100 ppm NO2/air) are obtained at 200°C, respectively. The corresponding transient states are also demonstrated in this work. From the employed detecting readout system, the gas concentrations of introduced gases (H2, NH3, and NO2) could be appropriately determined and identified. In addition, a novel gray polynomial differential model (GPDM) is employed to effectively reduce redundant gas sensing data and decrease the data transmission load. From experimental results, the studied integrated gas detecting system shows advantages of multiple gas detection capability, easy operation, low cost, and high portability. Therefore, this gas sensing system shows the promise for high-performance multiple gas detecting applications.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume160
Issue number9
DOIs
Publication statusPublished - 2013 Aug 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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