On-chip reference oscillators with process, supply voltage and temperature compensation

Chao Fang Tsai; Wan Jing Li; Peng Yu Chen; Ying Zu Lin; Soon Jyh Chang

doi:10.1109/ISNE.2010.5669186

On-chip reference oscillators with process, supply voltage and temperature compensation

Chao Fang Tsai, Wan Jing Li, Peng Yu Chen, Ying Zu Lin, Soon Jyh Chang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-μm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.

Original language	English
Title of host publication	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages	108-111
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2010.5669186
Publication status	Published - 2010
Event	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 2010 Nov 18 → 2010 Nov 19

Publication series

Name	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Other

Other	2010 International Symposium on Next-Generation Electronics, ISNE 2010
Country/Territory	Taiwan
City	Kaohsiung
Period	10-11-18 → 10-11-19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISNE.2010.5669186

Cite this

Tsai, C. F., Li, W. J., Chen, P. Y., Lin, Y. Z., & Chang, S. J. (2010). On-chip reference oscillators with process, supply voltage and temperature compensation. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 108-111). Article 5669186 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669186

@inproceedings{ce8b386ac9d54a0ea9d2e800f67a88ee,

title = "On-chip reference oscillators with process, supply voltage and temperature compensation",

abstract = "Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-μm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.",

author = "Tsai, {Chao Fang} and Li, {Wan Jing} and Chen, {Peng Yu} and Lin, {Ying Zu} and Chang, {Soon Jyh}",

year = "2010",

doi = "10.1109/ISNE.2010.5669186",

language = "English",

isbn = "9781424466948",

series = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

pages = "108--111",

booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

note = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 ; Conference date: 18-11-2010 Through 19-11-2010",

}

Tsai, CF, Li, WJ, Chen, PY, Lin, YZ & Chang, SJ 2010, On-chip reference oscillators with process, supply voltage and temperature compensation. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669186, 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program, pp. 108-111, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 10-11-18. https://doi.org/10.1109/ISNE.2010.5669186

On-chip reference oscillators with process, supply voltage and temperature compensation. / Tsai, Chao Fang; Li, Wan Jing; Chen, Peng Yu et al.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 108-111 5669186 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - On-chip reference oscillators with process, supply voltage and temperature compensation

AU - Tsai, Chao Fang

AU - Li, Wan Jing

AU - Chen, Peng Yu

AU - Lin, Ying Zu

AU - Chang, Soon Jyh

PY - 2010

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N2 - Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-μm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.

AB - Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-μm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.

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T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

SP - 108

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Tsai CF, Li WJ, Chen PY, Lin YZ, Chang SJ. On-chip reference oscillators with process, supply voltage and temperature compensation. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 108-111. 5669186. (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). doi: 10.1109/ISNE.2010.5669186

On-chip reference oscillators with process, supply voltage and temperature compensation

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